Colección INTI-SNRD


Título: In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
Fuente: AIP Advances, 4(11)
Autor/es: Arzubiaga, L.; Golmar, F.; Llopis, R.; Casanova, F.; Hueso, L. E.
Materias: Electricidad; Electrones; Transistores; Paladio; Electrodos; Aleaciones de níquel; Electrostática
Editor/Edición: AIP Publishing; 2014
Licencia: https://creativecommons.org/licenses/by/3.0/
Afiliaciones: Arzubiaga, L. CIC nanoGUNE; España
Golmar, F. Instituto Nacional de Tecnología Industrial (INTI); Argentina
Llopis, R. CIC nanoGUNE; España
Casanova, F. CIC nanoGUNE; España
Hueso, L. E. CIC nanoGUNE; España

Resumen: We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Descargar
Ver+/-